Calculations of III-V Semiconductor Properties.
Abstract
The authors have developed a phenomenological scheme which accounts well for the observations of the exciton energy spectra in GaAs in the intermediate magnetic field regime, that is, where the magnetic energy is of the order of the coulomb energy. They have formulated a new method for calculating the g-factors in solids and applied it to obtain the values of the g-factors in conducting electron states in InP and GaAs. The calculated values of 1.24 for InP and 0.485 for GaAs agree with the experimental values of 1.20 + or - 0.05 for InP and 0.45 + or - 0.05 for GaAs. The initial formulation for calculating the transport properties in semiconductors has been established and the initial computer coding to calculate the above has been done. A prediction of obtaining coherent radiations from superconducting multijunctions is made. It appears that the surface states reduce the superconducting transition temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1975
- Accession Number
- ADA013684
Entities
People
- Sang Boo Nam
Organizations
- Air Force Research Laboratory