Study of Electronic Transport and Breakdown in Thin Insulating Films

Abstract

An overview is given of progress in the study of high-field electronic transport and dielectric breakdown in thin (1000-5000 A) insulating films on silicon. The principal results to date are on SiO2; also under study are Al2O3, Si3N4, and layered composites. The studies include corona-induced nondestructive breakdown, self-quenched breakdown, effects of electron irradiation, study of charge-carrier trapping, study of lateral nonuniformities, electron-beam probing of the insulator-semiconductor interface, and theoretical modeling of hot-electron distributions and of localized breakdown.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1975
Accession Number
ADA013935

Entities

People

  • Walter C. Johnson
  • Wilmer R. Bottoms

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Carriers
  • Contracts
  • Current Density
  • Electric Fields
  • Electrical Engineering
  • Electron Beams
  • Electron Microscopes
  • Electrons
  • Elements
  • Films
  • Free Electrons
  • Ionization
  • Measurement
  • Scanning Electron Microscopes
  • Semiconductors
  • Silicon Dioxide
  • X Rays

Fields of Study

  • Engineering
  • Physics

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene