EBS (Electron Bombarded Semiconductor) RF Amplifier Design

Abstract

This report presents a comprehensive design criteria for EBS RF power amplifiers which incorporates all pertinent design parameters associated with both the electron beam and semiconductor diode targets. The derivation of the design model is described in detail, and an example amplifier design is carried out yielding an optimum set of device specifications and summary of predicted performance.

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1975
Accession Number
ADA014256

Entities

People

  • Daniel F. Kostishack

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Conductivity
  • Curvature
  • Dielectric Permittivity
  • Electron Guns
  • Electron Tubes
  • Equations
  • Geometry
  • Optical Lattices
  • Optimization
  • Power Amplifiers
  • Radio Frequency Amplifiers
  • Radio Frequency Power
  • Scattering
  • Semiconductor Diodes
  • Semiconductors
  • Thermal Conductivity
  • Two Dimensional

Readers

  • Electrical Engineering
  • Pulsed Power and Plasma Physics.
  • Software Engineering

Technology Areas

  • Directed Energy
  • Microelectronics