Vertical Channel Metal-Oxide-Silicon Field Effect Transistor.

Abstract

A large gate periphery (6200 micrometer) vertical channel microwave silicon MOS transistor has been developed which is capable of operating up to a frequency of 4.5 GHz, and delivering more than 1.6W of linear Class A power at 0.5 GHz. The maximum drain current and voltage capabilities of the device are 1A and 32 volts respectively, and the saturated transconductance is over 0.12 mhos. A yield of greater than 50% has also been established in device fabrication. Based on these results, an even larger periphery device is projected to operate at frequencies much higher than 4.5 GHz.

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1974
Accession Number
ADA014275

Entities

People

  • D. A. Tremere
  • H. C. Nathanson
  • J. G. Oakes
  • R. A. Wickstrom
  • T. M. S. Heng

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Boundaries
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Metal Oxides
  • Micrometers
  • Microwaves
  • Oxides
  • Semiconductor Devices
  • Transconductance
  • Transistors

Readers

  • Electronics Engineering
  • Semiconductor Device Technology