Microminiature Silicon Hall Generators,
Abstract
Specimens of microminiature Hall generators based on epitaxial silicon films on sapphire substrate have been developed and investigated. Some properties of these Hall generators are: active area approximately 60x60 square micrometers; thickness approximately 3 micrometers; input and output resistance approximately 400 to 500 ohms; specific sensitivity approximately 4.5 V/A.T; temperature coefficient of specific sensitivity does not exceed 0.1% degree.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1975
- Accession Number
- ADA014402
Entities
People
- A. N. Shaanov
- M. M. Klenemtev
- O. K. Khomeriki
- Ya. Sh. Palagashvili
- Yu. M. Orkodashvili
Organizations
- National Air and Space Intelligence Center