NRL Van de Graaff Operation 1 January - 31 December 1974.

Abstract

In the Cooperative Radiation Effects Simulation Program, a number of nickel alloys (primarily Ni-Al, but there were three dilute-solution alloys containing separately 1 at.% of V, Ti, or Cu) were irradiated with 2.8-MeV58Ni(+)ions at dose rates from .0007 dpa/sec to .07 dpa/sec with the targets at temperatures from 525C to 725C. In the ion-solid interactions program, projectile ions of S, Ar, Ca, Ni, and Kr from 2.0 to 7.8 MeV have been used to bombard targets of Al, and the resulting Al K alpha spectra have been measured; and 4-MeV S ions have been used to bombard targets of Al, Si, GaP, KCl, Ca, and Ti, and the resulting S K alpha spectra have been measured. In another part of this program, ion-excited XUV radiation has been measured when various ions from Al to Ar collide with various target atoms from Be to Ni. Ion-implantation has been studied as an alternate means of doping SiC with Al, and the role of oxygen in the luminescence of SiC crystals has been studied by the implantation of 16O(+) ions to fluences from 10 to the 12th power atoms/sq cm to 10 to the 16th power atoms/sq cm. The use of the charged particle magnetic spectrometer has been studied as a tool in the application of Rutherford backscattering of ions in materials analysis. And the nuclear-resonance technique has been developed as a means of measuring the depth concentration profiles of Al and Na in metal-oxide-semiconductor devices.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1975
Accession Number
ADA014507

Entities

People

  • J. W. Butler

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Alpha Spectra
  • Charged Particles
  • Dose Rate
  • Implantation
  • Ion Implantation
  • Ions
  • Materials
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Nickel Alloys
  • Nuclear Resonance
  • Radiation
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Physics

Readers

  • Powder metallurgy of Titanium alloys.
  • Solar Physics
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene