Silicon Planar n-p-nn+ Microwave Transistors Obtained by the Method of Ion Implantation,

Abstract

The production with ion beams of devices based on two and more junctions, in particular, bipolar transistors, is discussed. Ion implantation in combination with planar technology was used to develop n-p-nn+ transistors on silicon. It was possible to produce microwave silicon transistors with parameters close to those of the best models produced by the diffusion method.

Document Details

Document Type
Technical Report
Publication Date
Mar 21, 1975
Accession Number
ADA014529

Entities

People

  • B. I. Shchelchkov
  • F. A. Shchigol
  • K. B. Levitskii
  • V. G. Naumenko
  • V. M. Gusev

Organizations

  • United States Army Foreign Science and Technology Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Charged Particles
  • Diffusion
  • Implantation
  • Ion Beams
  • Ion Implantation
  • Ions
  • Microwaves
  • Production
  • Transistors

Readers

  • Electronics Engineering
  • Oncology (Cancer Research).