Characterization of High Frequency Probe Assembly for Integrated Circuit Measurements.
Abstract
A detailed, applications-oriented description of a measurement technique that characterizes a high-frequency probe assembly for integrated circuit measurements is given along with the procedure that extracts the parasitic effects of the probe assembly. The scattering parameters of an integrated-circuit device or transistor can now be extracted and accurately determined up to 2 GHz at the wafer stage of assembly. This represents a significant advance over conventional techniques that enabled only dc parameters to be measured. Measurement results using this technique are given along with the precision of values obtained as well as the nature of bias introduced. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1975
- Accession Number
- ADA014833
Entities
People
- C. A. Hoer
- R. L. Jesch
Organizations
- National Institute of Standards and Technology