Effects of Ionizing Radiation on the Characteristics of Metal-Oxide-Silicon Structures.
Abstract
The frequency and temperature dependences of the capacitance- and conductance-gate voltage characteristics of p-Si and n-Si MOS capacitors with high densities of process induced or KeV electron irradiation generated surface states and oxide charges are studied. The oxide charges are thought to originate from the interstitial oxygen donors while the surface states from trivalent silicon at the SiO2-Si interface. The room temperature radiation sensitivities of the Al-SiO2-Si system, under either positive or negative voltage applied to the aluminum electrode, are attributed to the high electric field drift of the OH(-) ions, which are freed from the trivalent silicon bonds, Si-OH, by the ionizing radiation. Fabrication conditions for producing the most radiation resistant SiO2-Si interface are proposed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1975
- Accession Number
- ADA015292
Entities
People
- C. T. Sah
- L. C. Sah