A Study of Noise in Charge-Coupled Devices.
Abstract
The report describes the results of a twelve-month program that was heavily weighted toward quantitative experimental characterization designed to establish the appropriate analytic models for the various spatial and temporal noise sources in CCDs that can be used to accurately predict the limiting performance of CCD functions. Low noise input and output techniques were refined to the point that bulk trapping was observed in a four-phase, 150-stage buried channel divice. Surface state trapping levels ranging from 800 to 2000 electrons were observed, in good agreement with the theoretical levels predicted using (N sub ss) values obtained for double-pulse experiments. Other noise sources treated included fixed-pattern or spatial noise, dark current, partition noise, and burst noise.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1975
- Accession Number
- ADA015365
Entities
People
- C. R. Hewes
- D. D. Buss
- J. B. Barton
- R. W. Brodersen
- S. P. Emmons
Organizations
- Texas Instruments