Relaxation Studies of Thin Films and Ion-Implanted Materials.

Abstract

Internal friction measurements have been successfully employed for the first time to characterize defect-related phenomena in thin metallic films and implanted or irradiated silicon. The examples studied include interstitial impurity defects in niobium films, grain-boundary sliding in aluminum films, and point-defect damage in silicon. Three new defect centers have also been discovered in electron-irradiated silicon by EPR measurements.

Document Details

Document Type
Technical Report
Publication Date
Aug 27, 1975
Accession Number
ADA015595

Entities

People

  • B. S. Berry

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Boundaries
  • Electrons
  • Films
  • Friction
  • Grain Boundaries
  • Impurities
  • Internal Friction
  • Materials
  • Measurement
  • Point Defects
  • Thin Films

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Powder metallurgy of Titanium alloys.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene