Investigation of Electronic Transport, Recombination and Optical Properties in InAs(1-x)P(x) Alloy Systems

Abstract

The research program sponsored by this contract during the fifth and sixth quarters has produced technical findings in several areas: (1) Electron microprobe analysis on fourteen InAs(1-x)P(x) epitaxial samples (of thicknesses ranging from 14.6 to 2.35 micrometers has yielded information in areas such as atomic compositions, the epitaxial layer homogeneity and the epilayer thickness. (2) Resistivity, Hall effect and magnetoresistance measurements on seven InAs(10.63)P(0.37) epitaxial samples have yielded information about both electron mobility and electron concentration as functions of the temperature and the H2 flow rate. (3) The optical absorption coefficient as a function of wavelength, deduced from transmission measurements, is given for seven InAsP epitaxial samples. (4) The surface photovoltage (SPV) method for determining the minority carrier diffusion length, in both bulk and epitaxial semiconductor specimens, is described.

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Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1975
Accession Number
ADA015605

Entities

People

  • Shengsan Li

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Gaps
  • Band Structures
  • Bulk Semiconductors
  • Electrical Engineering
  • Electron Mobility
  • Electronics
  • Energy Bands
  • Engineering
  • Flux Density
  • Magnetic Flux Density
  • Measurement
  • Night Vision
  • Optical Properties
  • Semiconductors
  • Solid State Electronics
  • X Rays

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics