Theoretical Search for Super-Velocity Semiconductors.

Abstract

This report describes work in two different areas. First of all, the progress made toward the synthesis of GaN thin films from chemical vapor deposition using the organometallic triethylgallium monamine (Ga(C2H5)3.NH3) is described. Electrical properties, mass spectrometry measurements, and surface ion mass spectrometry (SIMS) measurements are reported. Also, a discussion is given of a Monte Carlo calculation of the high field transport properties of GaN. This represents an effort toward developing a general Monte Carlo computer program for calculating the high field behavior of materials which offer the possibility for achieving high saturated drift velocities.

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1975
Accession Number
ADA015697

Entities

People

  • M. A. Littlejohn

Organizations

  • North Carolina State University

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Computer Programs
  • Computers
  • Electrical Properties
  • Films
  • Mass Spectrometry
  • Materials
  • Materials Processing
  • Measurement
  • Semiconductors
  • Spectrometry
  • Thin Films
  • Transport Properties
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Statistical inference.

Technology Areas

  • Microelectronics