Radiation Effect on GaAs Interface.

Abstract

The C-V and Q-V technique was applied to the study of interface charge distributions of GaAs epitaxial layers grown on semi-insulating substrates. Changes of mobility and free carrier concentration in the epitaxial layer and extending through the interface into the substrate were determined before and after exposure to a neutron fluence of 2.7 x 10 to the 15th power n/sq cm and a total dose of ionizing radiation of 10 to the 8th power rad (GaAs). Changes at the interface and in the epitaxial layer are correlated with the voltage-current characteristic variations of the GaAs junction field-effect transistors.

Document Details

Document Type
Technical Report
Publication Date
May 01, 1975
Accession Number
ADA015767

Entities

People

  • Kurt Lehovec
  • Rainer Zuleeg

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Ionizing Radiation
  • Mobility
  • Radiation
  • Radiation Effects
  • Semiconductor Devices
  • Substrates
  • Transistors

Fields of Study

  • Materials science

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics