Controlled Inversion Devices

Abstract

Three terminal controlled inversion devices were fabricated and the properties studied. Base current drive as low as 2 microamps were sufficient to lower collector threshold voltages 0.6 V. Reliable switching of 100 mA currents was possible. Properties of devices fabricated of silicon nitride, silicon oxynitride and amorphous silicon as the thin insulator material were investigated. The reproducibility, lack of interaction between adjacent collector electrodes, and base current sensitivity of devices fabricated with polysilicon and amorphour suggest that further work on this material be emphasized.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1975
Accession Number
ADA016759

Entities

People

  • H. A. Wegener
  • Harry Kroger

Organizations

  • Sperry Corporation

Tags

DTIC Thesaurus Topics

  • Air Force
  • Bipolar Junction Transistors
  • Ceramic Materials
  • Dielectrics
  • Electrodes
  • Electronics Laboratories
  • Field Effect Transistors
  • Materials
  • Metal-Semiconductor Junctions
  • Microwave Frequency
  • Modules (Electronics)
  • P-N Junctions
  • Semiconductor Devices
  • Semiconductors
  • Switching
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene