Monolithic Laser.
Abstract
This report describes the accomplishments of the second phase of the research program carried out under Contract No. N00014-73-C-0288 to develop the first prototype integrated optical transmitter. Extending the work of phase one on optically pumped mesa lasers, we have developed Ga(1-x)In(x)As (0 < or = x < or = 0.06) diode mesa lasers. These homojunction devices are the first wavelength-tunable, monolithic electrical injection lasers and have been operated between liquid nitrogen and room temperatures. Monolithic arrays of up to six mesa lasers have been operated with all the lasers oscillating simultaneously. Laser characteristics, including emission spectra, power output, and threshold current densities, have been measured in detail. Since these devices are homojunctions, their threshold current densities at room temperature are very high and their efficiencies are low. To improve on these characteristics, we have begun development of single-heterostructure GaAs-Ga(1-x)Al(x)As mesa lasers. These devices will operate under pulsed drive currents with low threshold current densities at room temperature. Their development and integration with planar waveguides continues under phase three of the current contract. Finally, chemical etching of the mesa structures has been explored as a possible alternative to growing the mesas. Preliminary encouraging results are given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1975
- Accession Number
- ADA016799
Entities
People
- D. W. Bellavance
- F. A. Blum
- F. H. Doerbeck
- J. C. Campbell
- K. L. Lawley
Organizations
- Texas Instruments