Long Term Memory in Junction Devices Using Multivalent Trapping Impurities in Silicon.

Abstract

Various multivalent dopants were investigated with the goal of obtaining nonvolatile multilevel memory devices in silicon using the Field Induced Trapping (FIT) effect. The test structures included Schottky diodes and resistive bars fabricated in silicon substrates suitably doped with multivalent dopants. Novel device effects were observed and are described. A model for a negative differential resistance Schottky barrier oscillator is proposed.

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1975
Accession Number
ADA016939

Entities

People

  • G. Domingo
  • J. W. Holm-kennedy
  • W. Kingsley

Organizations

  • University of California, Los Angeles

Tags

DTIC Thesaurus Topics

  • Diodes
  • Electronic Equipment
  • Impurities
  • Memory Devices
  • Oscillators
  • Resistance
  • Schottky Diodes
  • Substrates

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology