The Physics of Reliability of Future Electronic Devices.
Abstract
The following investigations are discussed in the report: (1) A dielectric breakdown model for wide bandgap insulators has been developed using the concept of impact ionization; For SiO2, it predicts a current density and an average field at breakdown which increase rapidly for film thickness below 200A, indicating that a thin gate insulator may be advantageous in MOS devices. (2) Semiconductor surface states at metal-semiconductor interface have been measured for the first time using a new photoelectron spectroscopy technique; (3) A scanned surface photovoltage method has been developed to produce images that have a resolution of the order of 2 micrometers. The scanned surface photovoltage technique is very powerful as a diagnostic tool in silicon processing. (4) Implanted noble gas atoms of Ar and Xe have been used as diffusion markers in growth studies of several silicide thin films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1974
- Accession Number
- ADA016964
Entities
People
- King-ning Tu
- Thomas H. Distefano
Organizations
- IBM Thomas J. Watson Research Center