The Physics of Reliability of Future Electronic Devices.
Abstract
The following investigations are discussed in the report: (1) At several metal-SiO2 interfaces, it was found that interdiffusion of the metal into the insulator induces a dipole layer which comprises a significant portion of the surface potential. The significance of this finding is that surface effect devices (MOS,CCD), which depend upon a stable surface potential, may be sensitive to changes in the dipole layer produced by time, temperature, electric fields, and impurties; (2) Transport measurements were performed on Si3N4 films deposited on Si. The valence band structure of Si3N4 and amorphous SiO2 has been examined by X-ray photoemission spectroscopy; (3) Near-noble metals react with Si single crystals to form a metal-rich silicide at 100C to 200C. The low temperature reaction is explained by proposing an interstitial model; (4) A review on the nature of thin film interfacial reactions with examples from the field of integrated circuits is given. The study of the reactions can be facilitated by a combination of three analytical tools--depth profiting by nuclear backscattering, surface analytical techniques combined with layer removal by sputtering and glancing angle X-ray diffraction.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1975
- Accession Number
- ADA016965
Entities
People
- King-ning Tu
- Thomas H. Distefano
Organizations
- IBM Thomas J. Watson Research Center