Technology and Physics of Infrared and Point Contact Diodes

Abstract

Background work for this contract performed by this laboratory has shown that the tunneling characteristics of junctions formed by a very thin dielectric layer surrounded by two metals is independent of frequency (from DC through 10 micrometer wavelength.) These junctions may be formed by a point contact on a lightly oxidized metal surface. Principal work done this period was construction of a mathematical model for an infrared antenna/diode combination and calculation of the expected operating parameters. A closed form analytical approximation was made and experimental checks on the model validity were started. An article based on this work will be prepared.

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Document Details

Document Type
Technical Report
Publication Date
Sep 09, 1975
Accession Number
ADA017205

Entities

People

  • Ali Javan

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Argon Lasers
  • Detection
  • Detectors
  • Dielectric Permittivity
  • Dielectric Properties
  • Films
  • Frequency
  • Low Temperature
  • Measurement
  • Metal Oxides
  • Metals
  • Oxides
  • Radiation
  • Radio Frequency
  • Resistance
  • Thin Films

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Spectroscopy.
  • Systems Analysis and Design