Anisotropic Transport Effects in IGFETS.
Abstract
The project deals with investigations into charge transport and subbanding in semiconductor FET systems. It has been observed that the transport anisotropy diminishes with decreasing MOSFET inversion density. This is interpreted as a washing-out of the subband structure by the channel width modulating effects of the trapped surface charge.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1975
- Accession Number
- ADA017450
Entities
People
- James W. Holm-kennedy
Organizations
- University of California, Los Angeles