Semiconductor Measurement Technology: Progress Report October 1 to December 31, 1974
Abstract
This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period include (1) initiation of development of measurement technology for characterizing boron nitride diffusion sources and hydrogen chloride purging gas, (2) application of dc electrical methods with a sensitivity of about 0.1 micrometer to the measurement of critical dimensions such as the width of diffusion windows, (3) completion of an initial comparison of line-width measurments made with an image shearing eyepiece and a filar eyepiece, and (4) development of procedures for measuring electrically the thermal resistance of the output transistor of integrated Darlington pairs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1975
- Accession Number
- ADA017523
Entities
People
- W. M. Bullis
Organizations
- National Institute of Standards and Technology