Infrared Response of Impurity Doped Silicon MOSFET's (IRFET's)

Abstract

Operation and characteristics of the indium doped infrared sensing MOSFET (IRFET) are described. Responsivities of over 40 milliwatts/microjoule have been observed with only small channel width to length ratios and large area devices. Much higher responsivities would be possible with smaller area devices and larger width to length ratios. This device is anticipated to be particularily usefull in the 3 to 5 micrometer wavelength range, and operates at temperatures less than 50K. Preliminary results have been obtained on the operation of the gallium doped infrared sensing MOSFET at 24.5K. A theoretical analysis shows that all surface type semiconductor infrared detectors, CID, CCD, or IRFET have essentially the same maximum attainable signal to noise ratio under shot noise or background limited operation.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1975
Accession Number
ADA017604

Entities

People

  • Leonard Forbes

Organizations

  • University of Arkansas

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Background Radiation
  • Charge Coupled Devices
  • Charge Density
  • Detectors
  • Electrical Engineering
  • Electronics Laboratories
  • Electrons
  • Equations
  • Fabrication
  • Infrared Detectors
  • Infrared Radiation
  • Metal-Oxide-Semiconductor Field-Effect Transistors
  • Modules (Electronics)
  • Optical Properties
  • Semiconductor Devices
  • Semiconductors
  • Silicon Dioxide

Readers

  • Electrical Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics