Effects of Heavy Doping on the I-V Characteristics of Schottky Barrier and P-N Junctions.
Abstract
This research derives expressions which show that the current-voltage characteristics of Schottky Barrier and P-N junctions are modified when doping levels are increased to degenerate levels. Such doping in these devices are extant in state-of-the-art technology for high-speed switches and highly stable current/voltage regulators. The experimental items for this research were Schottky-Barrier (Al n - Si) zener diodes. Good agreement was established between the degenerate theory and the more highly doped Schottky Barrier samples.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1975
- Accession Number
- ADA017948
Entities
People
- John F. Sheldon
Organizations
- United States Army Materiel Systems Analysis Activity