Investigation of Technological Problems in GaAs

Abstract

Various technological problems in the development of GaAs microwave devices are covered in this report. The work reported here includes epitaxial growth of high-resistivity and multiple ultra-thin films, study of the relationship between device performance and material parameters using FETs and p-n junctions, study of noise and impact ionization coefficients in IMPATT structures under high electrical field, preparation of high-quality oxide films for surface passivation, growth of semi-insulating substrates, and characterization techniques and study of ion implantation as a tool for microwave device fabrication. The activities and the progress made during the six-month period are described in separate sections.

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Document Details

Document Type
Technical Report
Publication Date
Jul 25, 1975
Accession Number
ADA018090

Entities

People

  • Anthony A. Immorlica
  • Burt W. Ludington
  • Fred H. Eisen
  • John A. Higgins
  • Reidar L. Kuvas

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Crystals
  • Electron Beams
  • Electronics Laboratories
  • Field Effect Transistors
  • Liquid Phase Epitaxy
  • Mass Spectrometry
  • Materials
  • Measurement
  • Oxide Films
  • P-N Junctions
  • Semiconductors
  • Spectra
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene