Testing and Characterization of Radiation Hardened C-MOS Devices.
Abstract
The susceptibility to ionizing radiation of small sample lots of candidate hardened C-MOS devices was evaluated. All except an early pilot line device with an undoped SiO2 gate dielectric exhibited small total dose susceptibility out of 1,000,000 rads (Si). Other studies (e.g., annealing and high temperature performance) also are reported. A test plan for more extensive evaluation of larger lots is discussed. Future work will concentrate on instrumentation development to implement that test plan and evaluation of new samples according to the plan.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1975
- Accession Number
- ADA019189
Entities
People
- Arnold S. Epstein
- Harvey A. Eisen
- Roland A. Polimadei
Organizations
- Harry Diamond Laboratories