Study of Electronic Transport and Breakdown in Thin Insulting Films
Abstract
An overview is given of progress in the study of high-field electronic transport and dielectric breakdown in thin (1000-5000 A) insulating films on silicon. The principal results to date are on SiO2; also under study are Al2O3, Si3N4, and layered composites. The studies include corona-induced nondestructive breakdown, self-quenched breakdown, effects of electron irradiation, study of charge-carrier trapping, study of lateral nonuniformities, electron-beam probing of the insulator-semiconductor interface, and theoretical modeling of hot-electron distributions and of localized breakdown.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1974
- Accession Number
- ADA019303
Entities
People
- Walter C. Johnson
- Wilmer R. Bottoms
Organizations
- Princeton University