A Computer Program to Calculate Surface State Densities and Lateral Nonuniformities in Metal-Oxide-Semiconductor Devices.

Abstract

A Basic language computer program to control data taking and parameter calculation of metal-oxide-semiconductor devices is presented. The program calculates surface potential, surface state density, apparent doping density, and depletion width.

Document Details

Document Type
Technical Report
Publication Date
Dec 22, 1975
Accession Number
ADA019438

Entities

People

  • B. S. H. Royce
  • T. A. Pandolfi

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Computer Programs
  • Computers
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Language
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Oxides
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Physics

Readers

  • Computer Science.
  • Fluid Dynamics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics