Anodic Oxidation of Gallium Arsenide and Gallium Arsenide Phosphide.

Abstract

The purpose of the work described here is twofold. The first is to study the anodization process and the resulting oxide films. The second is to examine possible applications of the oxide for encapsulation purposes. The intent of this chapter shall be to provide a brief introductory background into anodic oxidation. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1975
Accession Number
ADA019447

Entities

People

  • Dean Zensh Tsang

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Anodizing
  • Chemical Compounds
  • Encapsulation
  • Films
  • Gallium
  • Gallium Arsenides
  • Ores
  • Oxidation
  • Oxide Films
  • Oxides
  • Oxygen Compounds
  • Rocks And Deposits

Readers

  • Business Analytics
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene