Inverse Mean Free Path, Stopping Power, CSDA Range, and Straggling in Aluminum and Aluminum Oxide for Electrons of Energy = or < 10 keV
Abstract
The interaction of electrons with the solids Al and Al2O3 is described based on the electron gas model for the conduction band electrons in Al, a model insulator theory for the valence electrons in Al2O3, and inner shell ionization derived from atomic, generalized oscillator strengths. Contributions to the inverse mean free path and stopping power from the various interaction processes are tabulated for electron energies from 0.5 eV to 10 keV for Al and from 10 eV to 10 keV for Al2O3. Electron range in the continuous-slowing-down approximation and straggling are tabulated for electron energies from 10 eV to 10 keV for both materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1975
- Accession Number
- ADA019507
Entities
People
- C. J. Tung
- J. C. Ashley
- R. H. Ritchie
- W. E. Anderson
Organizations
- Oak Ridge National Laboratory