Inverse Mean Free Path, Stopping Power, CSDA Range, and Straggling in Aluminum and Aluminum Oxide for Electrons of Energy = or < 10 keV

Abstract

The interaction of electrons with the solids Al and Al2O3 is described based on the electron gas model for the conduction band electrons in Al, a model insulator theory for the valence electrons in Al2O3, and inner shell ionization derived from atomic, generalized oscillator strengths. Contributions to the inverse mean free path and stopping power from the various interaction processes are tabulated for electron energies from 0.5 eV to 10 keV for Al and from 10 eV to 10 keV for Al2O3. Electron range in the continuous-slowing-down approximation and straggling are tabulated for electron energies from 10 eV to 10 keV for both materials.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1975
Accession Number
ADA019507

Entities

People

  • C. J. Tung
  • J. C. Ashley
  • R. H. Ritchie
  • W. E. Anderson

Organizations

  • Oak Ridge National Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Amphibious Military Vehicles
  • Atoms
  • Charged Particles
  • Conduction Bands
  • Electron Density
  • Electron Energy
  • Electron Gas
  • Electrons
  • Energy Bands
  • Energy Transfer
  • Fermi Levels
  • Free Electrons
  • Materials
  • Mean Free Path
  • Molecular Orbital Theory
  • Oxides

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Molecular Photonics/Laser Physics

Technology Areas

  • Microelectronics