Surface and Bulk Electronic Phenomena in Solids.
Abstract
Experimental and theoretical studies have been undertaken on the atomic origins, the electronic properties and the generation, annealing and migration kinetics of the oxide charges and interface surface states in the silicon oxide-silicon MOS system. The two principle electronic properties of these oxide charges and interface surface states as well as the imperfection centers located in surface space charge layer of silicon are studied. These are: (1) The density of state and the carrier recombination, generation and trapping properties at the interface states and at the centers located in the surface space charge layer and (2) The mobilities of electrons and holes in the silicon surface layer due to the scattering by the spatially randomly distributed oxide charges and charged as well as neutral interface states and by the lattice vibrations or phonons. These properties are related to the electrical characteristics of MOS devices, including MOS capacitors, MOS transistors and special structures which simulate electron-beam accessed MOS mass memory devices. A novel distributed bistable MOS transistor with voltage controlled negative resistance characteristics is also studied.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1975
- Accession Number
- ADA019516
Entities
People
- C. T. Sah
Organizations
- University of Illinois Urbana–Champaign