Negative Microwave Resistance Effect in Zero-Gap Semiconductors.

Abstract

The band structure of alpha-tin and HgTe under uniaxial tensile stress has been investigated. Both zero and finite-temperature transport calculations were performed. While zero-temperature calculations indicated the negative differential resistivity (NDR) effect exists under stress, the finite temperature calculations indicated that it would be difficult to obtain NDR at room temperature unless the ffect could be enhanced by scattering or band coupling not included in the calculation. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1975
Accession Number
ADA019557

Entities

People

  • Li Ping

Organizations

  • Northwestern University

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Couplings
  • Electronics
  • Energy Bands
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Microwaves
  • Physical Properties
  • Resistance
  • Scattering
  • Semiconductors
  • Stresses
  • Tensile Stress
  • Zero Gap Semiconductors

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Mechanical Engineering/Mechanics of Materials.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics