Analysis of Semiconductor Structures by Nuclear and Electrical Techniques.
Abstract
This report presents three studies of thin film reactions between metal films and Si. In these studies MeV He ion backscattering spectrometry, Auger electron spectroscopy, secondary electron microscopy and glancing angle x-ray diffraction are used as the principal tools of analysis. (1) At temperatures well below the Si-Al eutectic (577C), fine grained polycrystalline Si in contact with Al films recrystallizes in the Al matrix. The recrystallization can be deferred or suppressed by placing a buffer layer of V or Ti between the Al film and poly Si. (2) When annealing Pt films deposited on Si in an O2 ambient the formation of PtSi does not consume all the Pt. The top layer of Pt is separated from the underlying PtSi by a thin SiO2 layer. (3) The formation of Ni silicide depends on the structural characteristics of the Si substrate. The growth of the silicide (Ni2Si) initially formed is faster on <100> and poly Si than on <111> Si. For Ni on amorphous Si, NiSi also appears.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1975
- Accession Number
- ADA019638
Entities
People
- B. Manfred Ullrich
- James W. Mayer
- Kunio Nakamura
- Marc-a. Nicolet
- Sylvanus S. Lau
Organizations
- California Institute of Technology