Study of IEMP Effects on IC Operational Amplifier Circuits
Abstract
Three typical operational amplifiers were irradiated by a plasma focus to study their IEMP responses with and without superposition of TREE responses. The 30-kJ plasma focus device produced photons primarily in the 8- to 100-keV range with pulse widths typically in the range of 10 to 15 nsec. Pulses of electrons were also deposited on the external leads of the operational amplifiers to determine the characteristic responses. These units were operated in circuits with closed-loop gains ranging from 5 to 100. During direct irradiation of the operational amplifiers, it was found that the IEMP responses (caused by photoemission within the housings) dominated the TREE responses provided that the RC time for the deposited charge to drain to ground was longer than a characteristics operational amplifier response time. The gas normally contained inside hermetically sealed operational amplifier units enhanced their IEMP responses. For most operational amplifiers, charge deposited on the input leads dominated the response, but some types were also sensitive to charge deposited on other external leads such as those controlling the offset. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 10, 1975
- Accession Number
- ADA019667
Entities
People
- Kenneth W. Paschen
- Melvin J. Bernstein
Organizations
- The Aerospace Corporation