The Resonant Raman Effect in Semiconductors.
Abstract
The goal of this research was basically to measure the Raman scattering efficiency in various semiconducting compounds as a function of incident laser frequency. The basis phonon and electron features of these materials are similar but do exhibit differences. By comparing these differences with the differences in the Raman dispersion, a fuller theoretical understanding of the scattering process and features of the electron-optical phonon coupling results.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1975
- Accession Number
- ADA019834
Entities
People
- Robert H. Callender
Organizations
- City College of New York