Depth Resolved Cathodoluminescence of Cadmium Implanted Gallium Arsenide.
Abstract
Three samples of GaAs were examined by depth resolved cathodoluminescence using electron beam energies from 5 KV to 25 KV at 10K and 80K. Samples 1 and 2 had been Cd implanted at 135 KV and annealed at 800C for 10 minutes; they received doses of 10 to the 15th power ion/sq cm and 10 to the 14th power ion/sq cm respectively. Sample 3 was n-type epitaxial and had not been intentionally doped. In the Cd implanted samples, the peak normally located near 1.488 eV at 10K (1.481 eV at 80K) was observed to shift to lower energy as the beam energy was reduced. This shift was interpreted as being caused by a depth dependent Cd concentration which was higher near the surface. Peak shifts as were observed in Samples 1 and 2 did not occur in the depth resolved spectra of Sample 3. From this study, it was concluded that using depth resolved cathodoluminescence spectra, energy shifts of peaks resulting from simple center recombinations can, under certain conditions, be used to estimate the extent of an implanted impurity concentration.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1975
- Accession Number
- ADA019950
Entities
People
- Dan L. Boulet Jr
Organizations
- Air Force Institute of Technology