Electron-Hole Pair-Creation Energy in Si02

Abstract

The average energy W required to create an electron-hole pair in SiO2 has been determined to be approximately 18 eV by consideration of the energy loss of fast electrons in solids. This energy is lost primarily by plasmon production and subsequent decay of the plasmons into electron-hole pairs. Also, recent data on electron-irradiated SiO2 films can be explained remarkably well by a columnar recombination model. The extrapolation to infinite electric field of the columnar model fit to the data yields a value for W that is in excellent agreement with the value obtained from the energy loss calculation.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1975
Accession Number
ADA020190

Entities

People

  • Flynn B. Mclean
  • George A. Ausman Jr.

Organizations

  • Harry Diamond Laboratories

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Electric Fields
  • Electron Beams
  • Electron Energy
  • Electron Holes
  • Electrons
  • Energy
  • Energy Bands
  • Equations
  • Ionization
  • Ionizing Radiation
  • Mean Free Path
  • Production
  • Radiation
  • Schematic Diagrams
  • Valence Bands

Fields of Study

  • Physics

Readers

  • Acoustical Oceanography.
  • Materials Science and Engineering.
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene