Complementary Metal Oxide Semiconductor Hardened Functions and Radiation Failure Criteria.

Abstract

Various methods for designing radiation-hardened large-scale integrated circuits in the complementary metal oxide semiconductor technology are discussed. Recommendations are made as to which approaches sould be pursued. Examples of required functions are given. Next, approximate failure criteria are generated. These failure criteria allow measurements on individual field effect transistors tp be used to predict failure levels in large-scale arrays. Failure criteria are related to excessive power dissipation, loss of noise margin, and degraded switching speeds. Finally, some specific circuit designs are considered. Transmission gates and 4-input NAND gates are studied. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1975
Accession Number
ADA020752

Entities

People

  • James D. Ledbetter
  • Robert J. Antinone

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Complementary Metal-Oxide Semiconductors
  • Field Effect Transistors
  • Integrated Circuits
  • Large Scale Integrated Circuits
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Nand Gates
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Engineering

Readers

  • Acoustics.
  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics