Transient Radiation Tests on the Intel 2102 1024-Bit Random Access Memory.
Abstract
The Intel 2102-1 500-ns RAM is a single monolithic integrated circuit fabricated with N-channel Si-gate technology. The results of transient radiation tests using electron beams from the NRL Linac facility indicate that the device cannot be used in an application where the total dose is greater than 2.0 x 10,000 rad (Si). Further, allowance for a device recovery time of 25 ns should be made if the device is to be exposed to a pulsed radiation environment (60 ns) with an applied dose of between several hundred rads up to approximately 2 x 10,000 rads. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1975
- Accession Number
- ADA020826
Entities
People
- G. P. Nelson
- M. Simmons
Organizations
- United States Naval Research Laboratory