Electron Beam Semiconductor L-Band Amplifier.
Abstract
The goal of this program is to develop a 2000 W L-band EBS amplifier capable of operating at a 1 percent duty cycle with 25 dB gain and an operating lifetime of 10,000 hours. During this period, design of the diode was completed and generation of the mask set for production of the diodes was partially completed. Design of the target holder and matching circuit was partially completed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1976
- Accession Number
- ADA020968
Entities
People
- Bruce W. Bell
Organizations
- Watkins-Johnson Company