Self-Diffusion in Silicon Nitride.
Abstract
Results are described for a two-year program intended to develop techniques for simultaneous measurement of Si and N self-diffusion in silicon nitride. A variety of materials were acquired and characterized. The materials examined included both alpha and beta forms of pure Si3N4 plus a variety of 'sialons'. The specimens selected for measurement were a dense, high purity alpha and a dense, commercial-grade beta silicon nitride.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1975
- Accession Number
- ADA021175
Entities
People
- Bernhardt J. Wuensch
- Thomas Vasilos