Breakdown of Symmetry Selection Rules for Defect Induced Raman Scattering,
Abstract
The theoretical results for the breakdown of the symmetry selection rules for defect-induced Raman scattering are presented in the case that (1) at least one of the p-like virtual electronic excited states has a strong spin orbit interaction and (2) the Jahn Teller active electron phonon interaction couplings evaluated on this excited state are different from zero. The evaluation of the effect presented here is performed for the Raman scattering from the F center in cesium halides. The author shows that all the densities of phonon states that transform according to the irreducible representations of the point group of the defect site are involved in determining every scattering process in which the incident and scattered light are linearly polarized.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1975
- Accession Number
- ADA021195
Entities
People
- E. Mulazzi
Organizations
- University of California, Irvine