Special EBS Devices.
Abstract
This Final Report describes the fabrication and testing of five GaAs Schottky-barrier EBS tubes. To improve the Schottky-barrier characteristics and the reliability of the EBS diode, we have used platinum as the barrier metal rather than chromium. To reduce the electrical resistance, a chromium layer was deposited on top of the platinum layer. Both theoretical calcualtions and experimental results indicate that a Schottky-barrier metallization system consisting of 100-A Pt plus 300-A Cr is nearly optimum for EBS-application. Special EBS tubes employing GaAs platinum Schottky-barrier diodes with integral beam shield were successfully fabricated, evaluated, and delivered to the contracting agency. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1976
- Accession Number
- ADA021493
Entities
People
- Angela San-paolo
- Ho-chung Huang
- Stuart T. Jolly
- Walter M. Janton
- Wieslau W. Siekanowicz
Organizations
- RCA Corporation