Effect of Processing Conditions on Microwave Dielectric Properties of Reaction-Sintered Silicon Nitride.

Abstract

It is shown that unreacted silicon at levels above 0.5 to 0.6 weight percent seriously degrades the dielectric properties of reaction-sintered silicon nitride. The use of fine particle size silicon and various oxide additives were both effective in reducing unreacted silicon. Measurements of dielectric properties by two facilities were in good agreement, and those properties appear adequate for radome applications at temperatures up to the highest temperature of measurement, 1000C.

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1976
Accession Number
ADA021539

Entities

People

  • Donald R. Messier
  • Philip Wong

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Additives (Chemicals)
  • Agreements
  • Ceramic Materials
  • Dielectric Properties
  • Measurement
  • Microwaves
  • Particle Size
  • Particles

Readers

  • Acoustics.
  • Integrated Circuit Design and Technology.
  • Surface Coatings Technology.