Applications of Ion Beams to Modify the Properties of Materials

Abstract

Ion implantation can modify the properties of materials by changing their electrical, optical, chemical or mechanical properties, and this technique is already in commercial use for production of semiconductor devices. The 65 papers presented at the conference on 'Applications of Ion Beams to Materials' (U. of Warwick, 8-12 Sept 1975) covered the applications of ion beams to semiconductors, insulators, and metals and included studies of radiation damage. All these aspects of the conference proceedings are summarized in this report, which also contains background material for the non-specialist.

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Document Details

Document Type
Technical Report
Publication Date
Jan 27, 1976
Accession Number
ADA021653

Entities

People

  • E. A. Wolicki
  • J. K. Hirvonen
  • J. W. Butler
  • K. L. Dunning

Organizations

  • Office of Naval Research

Tags

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemical Compounds
  • Chemical Synthesis
  • Chemistry
  • Compound Semiconductors
  • Dielectrics
  • Field Effect Transistors
  • Implantation
  • Ion Beams
  • Ion Implantation
  • Materials
  • Materials Processing
  • Materials Science
  • Mechanical Properties
  • Radiation
  • Semiconductor Devices
  • Semiconductors

Readers

  • Academic Conference Management
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics