Electron Beam Semiconductor S-Band Amplifier.
Abstract
This report discusses results of an investigation leading to the development of a pulsed 1 kilowatt peak power EBS RF amplifier operating at 3.2 GHz. The feasibility of building pulsed power EBS amplifiers in the 3 GHz frequency range was demonstrated. Techniques have been worked out for designing and constructing semiconductor diodes capable of maintaining their electrical characteristics under high voltage beam bombardment and high peak current conditions. A resonator and coupling system for S-Band operation has been devised which provides the proper diode load impednace and RF output coupling to a 50 ohm transmission line. The meanderline deflection structure has been improved so that a 1 watt RF input signal is sufficient to provide full beam deflection for optimum diode current modulation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1976
- Accession Number
- ADA021699
Entities
People
- Lester A. Roberts
Organizations
- Watkins-Johnson Company