Manufacturing Methods and Technology Engineering High Efficiency, High Power Gallium Arsenide Read-Type IMPATT Diodes.
Abstract
The growth of epitaxial wafers was begun; some of the wafers being grown for diode fabrication activities and others for use in the study of uniformity and reproducibility of characteristics. Work on wafer characterization techniques and other engineering tasks was begun. Preliminary wafer quality has been good. The yield of good diodes on a wafer has been high. Variation of device characteristics on a wafer has been excessive, however, as is demonstrated by the V sub B and V* data presented. Specifications for the Ku-band diode must be redefined to achieve the proper operating frequency. Scheduled activity in the diode fabrication area included the initial processing of Read wafers by production personnel in accordance with the appropriate process flow chart.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1975
- Accession Number
- ADA021730
Entities
People
- H. R. Chalifour
- S. R. Steele
Organizations
- RTX