Integrated Optical Circuits

Abstract

Attenuation measurements in epitaxial n-GaAs waveguides of different purity show that losses of <2 /cm can be achieved at energies within 50 meV of the band edge using material with N sub D + N sub A < or = 2 x 10 to the 15th/cu cm. The electroabsorption coefficient of low-loss GaAs waveguides has been measured in uniform electric fields at wavelengths from 0.91 to 0.93 micrometers. Electroabsorption detectors and modulators have been integrated into these waveguides. A Schottky-barrier electroabsorption modulator has been combined with a GaAs-AlGaAs laser integrated into a high-purity GaAs waveguide to form a completely integrated IOC source. PbSnTe liquid-phase epitaxial layers have been grown on top of lambda/2 gratings fabricated in PbTe to form PbSnTe heterostructure distributed feedback laser structures. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1975
Accession Number
ADA022695

Entities

People

  • Charles E. Hurwitz

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Attenuation
  • Detectors
  • Distributed Feedback Lasers
  • Electric Fields
  • Electro-Absorption Modulators
  • Epitaxial Growth
  • Laser Beams
  • Laser Diodes
  • Liquid Phases
  • Materials
  • Measurement
  • Optical Circuits
  • Optical Waveguides
  • Photonic Integrated Circuits
  • Quantum Cascade Lasers
  • Quantum Efficiency

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy