Semiconductor-Insulator Structures for the 1- to 2-Micrometers Region

Abstract

The goal of this contract is to develop, fabricate, evaluate, and deliver to NVL thin-film structures consisting of semiconductors having bandgaps on the order of 0.7 eV and compatible insulators. The following requirements are also goals: High-field tunneling transport, Semiconductor surface passivation, Semiconductor masking for diffusion and selective etching, Surface charge transport, Antireflection coatings. Activities of the program include semiconductor material preparation (GaInAs), insulator preparation, and characterization by both electrical and nonelectrical techniques of semiconductor-insulator structures. The primary semiconductor vehicles for this study have been GaSb and GaInAs, but early work was done on germanium; silicon was used as a control substrate for insulator depositions throughout the program.

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Document Details

Document Type
Technical Report
Publication Date
Feb 22, 1974
Accession Number
ADA022970

Entities

People

  • A. R. Reinberg
  • C. R. Hewes
  • J. M. Caywood
  • K. L. Lawley
  • R. T. Bate

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Capacitance
  • Chemical Synthesis
  • Chemistry
  • Dielectric Permittivity
  • Electrical Properties
  • Field Effect Transistors
  • Low Temperature
  • Materials
  • Materials Processing
  • Materials Science
  • Measurement
  • Nitrogen Compounds
  • Optical Materials
  • Refractive Index
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene