Multiphonon Raman Scattering in Si and AlAs.

Abstract

Resonance Raman scattering in semiconductors with indirect band gaps has been investigated in order to manifest the contribution of the iterative electron-one phonon process to second-order Raman scattering. The authors have searched without success for Raman peaks associated with intervalley scattering among multivalleys. Three- and four-phonon features in Si and AlAs have been observed and are compared with the two-phonon scattering strength.

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1976
Accession Number
ADA023009

Entities

People

  • Jin-joo Song
  • P. B. Klein
  • R. H. Callender
  • R. K. Chang

Organizations

  • Yale University

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Compound Semiconductors
  • Cooperation
  • Electromagnetic Scattering
  • Electronics
  • Electrons
  • Energy Bands
  • Light Scattering
  • New York
  • Physical Properties
  • Raman Scattering
  • Resonance
  • Scattering
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics